n-channel enhancement mode vertical dmos fet issue 2 C ma r ch 94 features * 100 volt v ds *r ds(on) = 4w absolut e maximum ratings. p arameter symbol value unit drain-so u rce volta ge v ds 100 v continuo us drain curre nt at t amb =25c i d 320 ma pu l sed drai n cu r rent i dm 6a gate s ource voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw oper a ting and storage temperatu r e range t j :t stg -5 5 to +1 50 c e lectrical characteristic s ( at t amb = 25 c unless othe rwise stat e d). p arameter s ymbolmin. max. unitcon ditions. drain-so u rce b reakdown volta ge bv dss 100 v i d =1ma , v gs =0v gat e -source thre shold volta ge v gs (th) 0.8 2.4 v i d=1m a , v ds = v gs gate -body le akage i gss 20 na v gs = 20v, v ds =0v ze ro gate voltage dr ain cur r ent i dss 1 100 ma ma v ds =10 0v , v gs =0 v ds =80 v, v gs =0v, t=12 5c (2) on-stat e drai n cu rrent(1) i d (on) 1.5 a v ds =25 v, v gs =10v st atic drain-sou rce on-state r esistance (1) r ds(on) 4 w v gs =10 v,i d =1a fo r ward t r ansconducta nce (1)(2) g fs 250 ms v ds =25 v,i d =1a inp ut capacita n ce (2) c iss 75 pf common so urce o utput cap a citance (2) c oss 25 pf v ds =25 v , v gs =0v , f=1m hz rever se transfer cap a citance (2) c rss 8pf turn-on del a y time (2)(3) t d(on) 7ns v dd ?25 v, i d =1a r ise time (2 ) (3) t r 8ns turn-o f f delay time (2)(3) t d( off) 13 ns fall time ( 2)(3) t f 13 ns (1 ) measure d under p ulsed conditions . width= 300 ms . du ty cycle 2% (2 ) sample test (3) switching times measured with 50 source impedance and <5ns rise time on a pulse generator w e-line to92 comp ati ble ZVN2110A d g s typic a l ch ar a cteri s tics output c har acteri sti cs v ds - drain source voltage (v ol t s) t ra n sfer char acte rist i cs 246810 020406080100 saturatio n c haracteristics v ds- drain source voltage (volts) vol ta g e s a turation c har a cteri s tics v gs- gate source volta ge (vol t s) v gs- gate so ur ce voltage (v ol t s) v ds - drain source voltage (v ol t s) 0246810 2.8 2.4 1.6 0.4 0 0.8 2.0 1.2 i d( o n ) -on-state drain current (amps) v ds= 10v 0 10 6 2 4 8 0246810 i d= 1a 500ma 100ma i d( o n ) -on-state drain current (amps) i d( o n ) -on-state drain current (amps) norm alised r ds(on) and v g s(th) v temp erature t j -junction temperature (c) normalised r d s(o n ) a nd v g s(th) -40 -20 0 204060 80 120 100 140160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rce r e s i s ta n c e r ds( o n ) ga te t h res h o l d v o l t a g e v g s( th ) i d= 1 a v gs = 10v i d= 1ma v gs = v ds 180 0 0.8 0.4 1.2 2.0 1.6 8v 9v 7v 5v 4v 6v 3v 5v 4v 8v 6v 9v 7v v gs= 0 0.8 0.4 1.2 2.0 1.6 on-res i stance v gate-sour ce vo lt age v gs- gat e so ur ce voltage ( vo lts) rds(on)-drain source resistance ( w ) 1 10 100 500ma i d = 1a 100ma 1 10 5 v gs= 10v 3v 10v v ds= 25v ZVN2110A 3-365
n-channel enhancement mode vertical dmos fet issue 2 C march 94 features * 100 volt v ds *r ds(on) = 4 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 100 v continuous drain current at t amb =25c i d 320 ma pulsed drain current i dm 6a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 100 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v id=1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 1 100 m a m a v ds =100v, v gs =0 v ds =80v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 1.5 a v ds =25v, v gs =10v static drain-source on-state resistance (1) r ds(on) 4 w v gs =10v,i d =1a forward transconductance (1)(2) g fs 250 ms v ds =25v,i d =1a input capacitance (2) c iss 75 pf common source output capacitance (2) c oss 25 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 8pf turn-on delay time (2)(3) t d(on) 7ns v dd ? 25v, i d =1a rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 13 ns fall time (2)(3) t f 13 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. ( 3 ) s wi tc hin g t im es m easu r ed wi t h 50 w sou r ce im peda n ce a n d < 5 n s ri se t im e o n a pu l se ge n e r ato r e-line to92 compatible ZVN2110A 3-364 d g s typical characteristics output characteristics v ds - drain source voltage (volts) transfer characteristics 2 46810 020 406080100 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) v gs- gate source voltage (volts) v ds - drain source voltage (volts) 02 46810 2.8 2.4 1.6 0.4 0 0.8 2.0 1.2 i d( o n ) -on-state drain current (amps) v ds= 10v 0 10 6 2 4 8 02 46810 i d= 1a 500ma 100ma i d( o n ) -on-state drain current (amps) i d( o n ) -on-state drain current (amps) normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r d s(o n ) a nd v g s(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rce r e s i s ta n c e r ds( o n ) ga te t h res h o l d v o l t a g e v g s( th ) i d= 1 a v gs= 10v i d= 1ma v gs= v ds 180 0 0.8 0.4 1.2 2.0 1.6 8v 9v 7v 5v 4v 6v 3v 5v 4v 8v 6v 9v 7v v gs= 0 0.8 0.4 1.2 2.0 1.6 on-resistance v gate-source voltage v gs- gate source voltage (volts) rds(on)-drain source resistance ( w ) 1 10 100 500ma i d = 1a 100ma 1 10 5 v gs= 10v 3v 10v v ds= 25v ZVN2110A 3-365
typical characteristics transconductance v drain current i d(on) - drain current (amps ) g fs -t r ans c o n ducta n c e ( m s) g fs -t r ans c o n ducta n c e ( m s) q-charge (nc) transconductance v gate-source voltage v gs -gate source voltage (volts) v gs - gate so ur ce v o l t age (v olts) gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 v ds = 20v i d= 1a 50v 80v 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.2 0.4 0.6 0.8 1.0 v ds= 25v 0 100 200 400 300 500 02 46810 v ds= 25v 0 300 200 100 400 500 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capacita n ce ( p f ) c oss c iss c rss 0 10 20 30 40 50 60 40 20 80 100 ZVN2110A 3-366
|
